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SR Mohapatra and Anil Kumar Singh
Over the past few decades, the most versatile branch of physics named the “condensed matter physics” has been a hot topic of research in the scientific community. It explores widely the microscopic and macroscopic properties of matter. Here, the most interesting and fundamental aspect is the interaction between the electrons in solids which results in to a numerous applications. From this point of view, the fabrication of the ‘ultimate memory devices’ has been in everincreasing demand owing to its robust, dense, fast, non-volatile and less energy expensive features. This objectives can be achieved by using various multiferroic and magnetoelectric materials; thus paving way for electric-field control of magnetization and vice-versa. Among several magnetoelectric materials, spin frustrated multiferroics are most versatile due to its magnetic field control of dielectric/ferroelectic properties. In fact, this can solely be achieved by the interplay and coexistence of several order parameters such as spin, charge, lattice and orbital degrees of freedom.